4/17/2023 0 Comments Matisse la musique![]() Control experiments and simulation analysis indicate that the high-resolution capabilities of both HSQ resist and the heavy ions contribute the sub-5 nm fabrication result. By adopting 2.15 GeV 86Kr26+ ions as the exposure source and hydrogen silsesquioxane (HSQ) as a negative-tone inorganic resist, ultrahigh-aspect-ratio nanofilaments with sub-5 nm feature size, following the trajectory of single heavy ions, were reliably obtained. In this work, we demonstrate a process having the capability to realize single-digit nanometer lithography using single heavy ions. Here, some of the most promising fabrication methods are evaluated, with an emphasis on scalable techniques that can be used to rapidly pattern large‐area nanogap arrays. However, their fabrication remains a considerable challenge, especially for applications that require patterning over macroscopic length‐scales. ![]() Metallic nanogaps with metal–metal separations below 10 nm have many applications in nanoscale photonics and electronics. The physical principles behind each method are reviewed and their strengths and limitations for nanogap patterning in terms of resolution, fidelity, speed, ease of implementation, versatility, and scalability to large substrate sizes are discussed. Here, some of the most promising techniques for nanogap fabrication are evaluated, covering established technologies such as photolithography, electron‐beam lithography (EBL), and focused ion beam (FIB) milling, plus a number of newer methods that use novel electrochemical and mechanical means to effect the patterning. However, their fabrication remains a considerable challenge, especially for applications that require patterning of nanoscale features over macroscopic length‐scales. Metallic nanogaps with metal–metal separations of less than 10 nm have many applications in nanoscale photonics and electronics.
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